APTGT75X60T3G APTGT75X60T3G ? rev 0 july, 2007 www.microsemi.com 1-5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 100* i c continuous collector current t c = 80c 75* i cm pulsed collector current t c = 25c 150 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 250 w rbsoa reverse bias safe operating area t j = 150c 150a @ 550v * specification of igbt device but output current must be limited to 40a at tc=80c and 65a at tc=25c not to exceed a connectors temperature greater than 120c. these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com 31 14 r1 13 2 28 25 23 15 20 16 19 10 18 22 30 29 3 4 8 7 11 12 it is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if dc power is connected between pins 15, 16 & 12. pins 15 & 16 must be shorted together. 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 v ces = 600v i c = 75a* @ tc = 80c application ? motor control features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant 3 phase bridge trench + field stop igbt ? power module
APTGT75X60T3G APTGT75X60T3G ? rev 0 july, 2007 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 75a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 600a 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 4620 c oes output capacitance 300 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 140 pf t d(on) turn-on delay time 110 t r rise time 45 t d(off) turn-off delay time 200 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 75a r g = 4.7 ? 40 ns t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 250 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 75a r g = 4.7 ? 60 ns t j = 25c 0.35 e on turn-on switching energy t j = 150c 0.6 mj t j = 25c 2.2 e off turn-off switching energy v ge = 15v v bus = 300v i c = 75a r g = 4.7 ? t j = 150c 2.6 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 250 i rm maximum reverse leakage current v r =600v t j = 150c 500 a i f dc forward current tc = 80c 50 a t j = 25c 1.6 2 v f diode forward voltage i f = 50a v ge = 0v t j = 150c 1.5 v t j = 25c 100 t rr reverse recovery time t j = 150c 150 ns t j = 25c 2.6 q rr reverse recovery charge t j = 150c 5.4 c t j = 25c 0.6 e r reverse recovery energy i f = 50a v r = 300v di/dt =1800a/s t j = 150c 1.2 mj
APTGT75X60T3G APTGT75X60T3G ? rev 0 july, 2007 www.microsemi.com 3-5 temperature sensor ntc (see application note apt0406 on www. microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.6 r thjc junction to case thermal resistance diode 1.42 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTGT75X60T3G APTGT75X60T3G ? rev 0 july, 2007 www.microsemi.com 4-5 typical performance curve output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 00.511.522.53 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 3.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 1 2 3 4 5 0 25 50 75 100 125 150 i c (a) e (mj) v ce = 300v v ge = 15v r g = 4.7 ? t j = 150c eon eon eoff er 0 1 2 3 4 5 0 5 10 15 20 25 30 35 40 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 75a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 25 50 75 100 125 150 175 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =4.7 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) igbt
APTGT75X60T3G APTGT75X60T3G ? rev 0 july, 2007 www.microsemi.com 5-5 forward characteristic of diode t j =25c t j =125c t j =150c 0 25 50 75 100 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) hard switching 0 10 20 30 40 50 60 70 0 20406080100 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =4.7 ? t j =150c t c =85c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode microsemi reserves the right to change, without notice, the specifications and infor mation contained herein microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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